Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Lukyanchikova, N., Garbar, N., Kudina, V., Smolanka, A., Simoen, E., Claeys, C.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119049
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.

The results of low-frequency noise investigation in fully-depleted (FD)
 nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI)
 and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical
 at zero back gate voltage for the devices studied and the density of the corresponding
 noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the
 HfO2 portion. The results on the McWhorter noise are used for studying the behavior of
 the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where
 V*
 is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE)
 Lorentzians appear in the low-frequency noise spectra at an accumulation back gate
 voltage and that the parameters of those Lorentzians are different for the sSOI and SOI
 nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation
 bias for sufficiently wide nMuGFET.