Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studie...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2008
Main Authors: Lukyanchikova, N., Garbar, N., Kudina, V., Smolanka, A., Simoen, E., Claeys, C.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119049
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119049
record_format dspace
spelling Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
2017-06-03T04:43:24Z
2017-06-03T04:43:24Z
2008
Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 73.50.Td, 85.30.Tv
https://nasplib.isofts.kiev.ua/handle/123456789/119049
The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studied and the density of the corresponding noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the HfO2 portion. The results on the McWhorter noise are used for studying the behavior of the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where V* is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE) Lorentzians appear in the low-frequency noise spectra at an accumulation back gate voltage and that the parameters of those Lorentzians are different for the sSOI and SOI nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation bias for sufficiently wide nMuGFET.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
spellingShingle Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
title_short Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_full Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_fullStr Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_full_unstemmed Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_sort low-frequency noise in nfinfets of different dimensions processed in strained and non-strained soi wafers
author Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
author_facet Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
publishDate 2008
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studied and the density of the corresponding noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the HfO2 portion. The results on the McWhorter noise are used for studying the behavior of the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where V* is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE) Lorentzians appear in the low-frequency noise spectra at an accumulation back gate voltage and that the parameters of those Lorentzians are different for the sSOI and SOI nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation bias for sufficiently wide nMuGFET.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119049
citation_txt Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.
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AT garbarn lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT kudinav lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT smolankaa lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT simoene lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT claeysc lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
first_indexed 2025-12-07T19:12:13Z
last_indexed 2025-12-07T19:12:13Z
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