Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
The results of low-frequency noise investigation in fully-depleted (FD)
 nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI)
 and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical
 at zero back gate voltag...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119049 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862728932213653504 |
|---|---|
| author | Lukyanchikova, N. Garbar, N. Kudina, V. Smolanka, A. Simoen, E. Claeys, C. |
| author_facet | Lukyanchikova, N. Garbar, N. Kudina, V. Smolanka, A. Simoen, E. Claeys, C. |
| citation_txt | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of low-frequency noise investigation in fully-depleted (FD)
nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI)
and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical
at zero back gate voltage for the devices studied and the density of the corresponding
noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the
HfO2 portion. The results on the McWhorter noise are used for studying the behavior of
the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where
V*
is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE)
Lorentzians appear in the low-frequency noise spectra at an accumulation back gate
voltage and that the parameters of those Lorentzians are different for the sSOI and SOI
nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation
bias for sufficiently wide nMuGFET.
|
| first_indexed | 2025-12-07T19:12:13Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119049 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:12:13Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lukyanchikova, N. Garbar, N. Kudina, V. Smolanka, A. Simoen, E. Claeys, C. 2017-06-03T04:43:24Z 2017-06-03T04:43:24Z 2008 Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 73.50.Td, 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/119049 The results of low-frequency noise investigation in fully-depleted (FD)
 nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI)
 and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical
 at zero back gate voltage for the devices studied and the density of the corresponding
 noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the
 HfO2 portion. The results on the McWhorter noise are used for studying the behavior of
 the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where
 V*
 is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE)
 Lorentzians appear in the low-frequency noise spectra at an accumulation back gate
 voltage and that the parameters of those Lorentzians are different for the sSOI and SOI
 nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation
 bias for sufficiently wide nMuGFET. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers Article published earlier |
| spellingShingle | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers Lukyanchikova, N. Garbar, N. Kudina, V. Smolanka, A. Simoen, E. Claeys, C. |
| title | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers |
| title_full | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers |
| title_fullStr | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers |
| title_full_unstemmed | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers |
| title_short | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers |
| title_sort | low-frequency noise in nfinfets of different dimensions processed in strained and non-strained soi wafers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119049 |
| work_keys_str_mv | AT lukyanchikovan lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers AT garbarn lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers AT kudinav lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers AT smolankaa lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers AT simoene lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers AT claeysc lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers |