Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C
By using the Faraday method and complex of electro-physical studies (Hall
 effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in
 “vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the
 presence of deep thermodon...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119052 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862570035620347904 |
|---|---|
| author | Babych, V.M. Luchkevych, M.M. Pavlovskyy, Yu.V. Tsmots, V.M. |
| author_facet | Babych, V.M. Luchkevych, M.M. Pavlovskyy, Yu.V. Tsmots, V.M. |
| citation_txt | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | By using the Faraday method and complex of electro-physical studies (Hall
effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in
“vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the
presence of deep thermodonors with the ionization energy Еі ≥ 200 meV in these samples
contributes to the appearance of a paramagnetic constituent with the magnetic
susceptibility (χ
par) even at 300 K. χ
par in this material does not depend on temperature in
the range of 77 - 300 K that can testify on the Van-Fleck origin of this magnetic
susceptibility component. Absence of nonlinearities in the dependence χ(H) within the
interval 0.3-4 kOe shows uncooperative character of magnetism found out.
|
| first_indexed | 2025-11-26T02:05:56Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119052 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T02:05:56Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Babych, V.M. Luchkevych, M.M. Pavlovskyy, Yu.V. Tsmots, V.M. 2017-06-03T04:45:30Z 2017-06-03T04:45:30Z 2008 Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 75.20.-g, 75.30.Cr, 75.40.Cx https://nasplib.isofts.kiev.ua/handle/123456789/119052 By using the Faraday method and complex of electro-physical studies (Hall
 effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in
 “vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the
 presence of deep thermodonors with the ionization energy Еі ≥ 200 meV in these samples
 contributes to the appearance of a paramagnetic constituent with the magnetic
 susceptibility (χ
 par) even at 300 K. χ
 par in this material does not depend on temperature in
 the range of 77 - 300 K that can testify on the Van-Fleck origin of this magnetic
 susceptibility component. Absence of nonlinearities in the dependence χ(H) within the
 interval 0.3-4 kOe shows uncooperative character of magnetism found out. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C Article published earlier |
| spellingShingle | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C Babych, V.M. Luchkevych, M.M. Pavlovskyy, Yu.V. Tsmots, V.M. |
| title | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C |
| title_full | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C |
| title_fullStr | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C |
| title_full_unstemmed | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C |
| title_short | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C |
| title_sort | magnetic susceptibility of p-si(b) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °c |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119052 |
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