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Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C

By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in “vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the presence of deep thermodonors with the ionization...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
Hauptverfasser: Babych, V.M., Luchkevych, M.M., Pavlovskyy, Yu.V., Tsmots, V.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119052
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ.

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