Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Thermoelectric power, electrical conductivity, and high field Hall effect were
 studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers
 (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier
 transport mechanisms in laye...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
Hauptverfasser: Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., Radchenko, M.V., Sichkovskiy, V.I., Lashkarev, G.V., Olsthoorn, S.M., Sadowski, J.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119060
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Zitieren:Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.

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author Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
author_facet Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
citation_txt Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Thermoelectric power, electrical conductivity, and high field Hall effect were
 studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers
 (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier
 transport mechanisms in layers with both metallic and non-metallic types of conductivity
 and allows determination of the Fermi energy and carrier concentration. At high
 temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases
 with increasing temperature. That indicates the presence of a degenerate hole gas
 with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for
 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity
 show an additional contribution to the thermoelectric power with the maximum close to
 the Curie temperature.
first_indexed 2025-12-07T15:29:27Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T15:29:27Z
publishDate 2008
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
2017-06-03T04:51:52Z
2017-06-03T04:51:52Z
2008
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
1560-8034
PACS 73.50.Lw, 73.61.Ey, 75.50.Pp
https://nasplib.isofts.kiev.ua/handle/123456789/119060
Thermoelectric power, electrical conductivity, and high field Hall effect were
 studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers
 (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier
 transport mechanisms in layers with both metallic and non-metallic types of conductivity
 and allows determination of the Fermi energy and carrier concentration. At high
 temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases
 with increasing temperature. That indicates the presence of a degenerate hole gas
 with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for
 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity
 show an additional contribution to the thermoelectric power with the maximum close to
 the Curie temperature.
This work was partially supported by the Committee for
 Scientific Researches (Poland) under project PBZ-KBN-
 044/P03/2001 and within European Community program
 ICA1-CT-2000-70018 (Center of Excellence CELDIS).
 The GaMnAs samples were grown within the project
 supported by the Swedish Research Council (VR) and
 Swedish Foundation of Strategic Researches (SSF)
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Article
published earlier
spellingShingle Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
title Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_full Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_fullStr Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_full_unstemmed Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_short Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_sort thermoelectric studies of electronic properties of ferromagnetic gamnas layers
url https://nasplib.isofts.kiev.ua/handle/123456789/119060
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AT arciszewskam thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
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