Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic an...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
Hauptverfasser: Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., Radchenko, M.V., Sichkovskiy, V.I., Lashkarev, G.V., Olsthoorn, S.M., Sadowski, J.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119060
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119060
record_format dspace
spelling Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
2017-06-03T04:51:52Z
2017-06-03T04:51:52Z
2008
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
1560-8034
PACS 73.50.Lw, 73.61.Ey, 75.50.Pp
https://nasplib.isofts.kiev.ua/handle/123456789/119060
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature.
This work was partially supported by the Committee for Scientific Researches (Poland) under project PBZ-KBN- 044/P03/2001 and within European Community program ICA1-CT-2000-70018 (Center of Excellence CELDIS). The GaMnAs samples were grown within the project supported by the Swedish Research Council (VR) and Swedish Foundation of Strategic Researches (SSF)
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
spellingShingle Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
title_short Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_full Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_fullStr Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_full_unstemmed Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_sort thermoelectric studies of electronic properties of ferromagnetic gamnas layers
author Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
author_facet Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
publishDate 2008
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119060
citation_txt Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
work_keys_str_mv AT osinniyv thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT dybkok thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT jedrzejczaka thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT arciszewskam thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT dobrowolskiw thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT storyt thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT radchenkomv thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT sichkovskiyvi thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT lashkarevgv thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT olsthoornsm thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT sadowskij thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
first_indexed 2025-12-07T15:29:27Z
last_indexed 2025-12-07T15:29:27Z
_version_ 1850863902761418752

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