TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal annealing were carried out. TiB₂-film on Czochralski-grown (001) GaAs substrates...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119063 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment / T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, O.S. Lytvyn, I.V. Prokopenko, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 73-77. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862607890999672832 |
|---|---|
| author | Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Lytvyn, O.S. Prokopenko, I.V. Ivanov, V.N. |
| author_facet | Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Lytvyn, O.S. Prokopenko, I.V. Ivanov, V.N. |
| citation_txt | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment / T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, O.S. Lytvyn, I.V. Prokopenko, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 73-77. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal annealing were carried out. TiB₂-film on Czochralski-grown (001) GaAs substrates were prepared by the magnetron sputtering in argon atmosphere at growth velocity ~ 5 Е/s and film thicknesses ranging from 10 to 50 nm. Samples were annealed during 1 min at 400, 600 and 800 °C. By using X-ray diffraction methods, it was shown that at our experimental conditions the magnetron sputtering of titanium diboride film causes the titanium and boron solid solutions formation as well as formation of some other phases within an interface region. At short-term thermal annealing the relaxation of mechanical strains, decay of solid solutions, generation of dislocations and their propagation as well as point defects redistribution take place. The processes of structural ordering have non-monotonous temperature dependence and differ for various types of structures.
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| first_indexed | 2025-11-28T15:47:39Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119063 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T15:47:39Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Lytvyn, O.S. Prokopenko, I.V. Ivanov, V.N. 2017-06-03T04:56:07Z 2017-06-03T04:56:07Z 1999 TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment / T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, O.S. Lytvyn, I.V. Prokopenko, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 73-77. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.72.Cc, 61.72.Vv https://nasplib.isofts.kiev.ua/handle/123456789/119063 The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal annealing were carried out. TiB₂-film on Czochralski-grown (001) GaAs substrates were prepared by the magnetron sputtering in argon atmosphere at growth velocity ~ 5 Е/s and film thicknesses ranging from 10 to 50 nm. Samples were annealed during 1 min at 400, 600 and 800 °C. By using X-ray diffraction methods, it was shown that at our experimental conditions the magnetron sputtering of titanium diboride film causes the titanium and boron solid solutions formation as well as formation of some other phases within an interface region. At short-term thermal annealing the relaxation of mechanical strains, decay of solid solutions, generation of dislocations and their propagation as well as point defects redistribution take place. The processes of structural ordering have non-monotonous temperature dependence and differ for various types of structures. The work was supported by the Ukrainian Scientific and Technological Center (project №464). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment Article published earlier |
| spellingShingle | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Lytvyn, O.S. Prokopenko, I.V. Ivanov, V.N. |
| title | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment |
| title_full | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment |
| title_fullStr | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment |
| title_full_unstemmed | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment |
| title_short | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment |
| title_sort | tib₂/gaas and au-tib₂/gaas structural transformations at short-term thermal treatment |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119063 |
| work_keys_str_mv | AT kryshtabtg tib2gaasandautib2gaasstructuraltransformationsatshorttermthermaltreatment AT lytvynpm tib2gaasandautib2gaasstructuraltransformationsatshorttermthermaltreatment AT mazinmo tib2gaasandautib2gaasstructuraltransformationsatshorttermthermaltreatment AT lytvynos tib2gaasandautib2gaasstructuraltransformationsatshorttermthermaltreatment AT prokopenkoiv tib2gaasandautib2gaasstructuraltransformationsatshorttermthermaltreatment AT ivanovvn tib2gaasandautib2gaasstructuraltransformationsatshorttermthermaltreatment |