TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119063
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment / T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, O.S. Lytvyn, I.V. Prokopenko, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 73-77. — Бібліогр.: 8 назв. — англ.

The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal annealing were carried out. TiB₂-film on Czochralski-grown (001) GaAs substrates...