Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique

The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, which allowed us to determine the activation energies and the reaction t...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:1999
Hauptverfasser: Volodin, N.M., Zavyalova, L.V., Kirillov, A.I., Svechnikov, S.V., Prokopenko, I.V., Khanova, A.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119064
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique / N.M. Volodin, L.V. Zavyalova, A.I. Kirillov, S.V. Svechnikov, I.V. Prokopenko, A.V. Khanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 78-83. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Volodin, N.M.
Zavyalova, L.V.
Kirillov, A.I.
Svechnikov, S.V.
Prokopenko, I.V.
Khanova, A.V.
author_facet Volodin, N.M.
Zavyalova, L.V.
Kirillov, A.I.
Svechnikov, S.V.
Prokopenko, I.V.
Khanova, A.V.
citation_txt Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique / N.M. Volodin, L.V. Zavyalova, A.I. Kirillov, S.V. Svechnikov, I.V. Prokopenko, A.V. Khanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 78-83. — Бібліогр.: 9 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, which allowed us to determine the activation energies and the reaction type. The investigations of the structure and surface morphology of films were carried out. The technological conditions are determined providing the fabrication of single-phase SmS films of cubic modification with the most ordered crystal structure.
first_indexed 2025-11-30T20:49:35Z
format Article
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id nasplib_isofts_kiev_ua-123456789-119064
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-30T20:49:35Z
publishDate 1999
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Volodin, N.M.
Zavyalova, L.V.
Kirillov, A.I.
Svechnikov, S.V.
Prokopenko, I.V.
Khanova, A.V.
2017-06-03T04:56:50Z
2017-06-03T04:56:50Z
1999
Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique / N.M. Volodin, L.V. Zavyalova, A.I. Kirillov, S.V. Svechnikov, I.V. Prokopenko, A.V. Khanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 78-83. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 81.15.G, 68.55.J, 61.66
https://nasplib.isofts.kiev.ua/handle/123456789/119064
The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, which allowed us to determine the activation energies and the reaction type. The investigations of the structure and surface morphology of films were carried out. The technological conditions are determined providing the fabrication of single-phase SmS films of cubic modification with the most ordered crystal structure.
The authors express their deep gratitude to professor G.A.Domrachev for valuable comments and to E.A Shchupak for synthesis of compounds.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
Article
published earlier
spellingShingle Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
Volodin, N.M.
Zavyalova, L.V.
Kirillov, A.I.
Svechnikov, S.V.
Prokopenko, I.V.
Khanova, A.V.
title Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
title_full Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
title_fullStr Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
title_full_unstemmed Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
title_short Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique
title_sort investigation of growth conditions, crystal structure and surface morphology of sms films fabricated by mocvd technique
url https://nasplib.isofts.kiev.ua/handle/123456789/119064
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