Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique
Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) re...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119065 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737756888760320 |
|---|---|
| author | Movchan, S. Sizov, F. Tetyorkin, V. |
| author_facet | Movchan, S. Sizov, F. Tetyorkin, V. |
| citation_txt | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed.
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| first_indexed | 2025-12-07T20:00:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119065 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:00:26Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Movchan, S. Sizov, F. Tetyorkin, V. 2017-06-03T04:57:29Z 2017-06-03T04:57:29Z 1999 Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 71.28, 72.20, 73.40 https://nasplib.isofts.kiev.ua/handle/123456789/119065 Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique Article published earlier |
| spellingShingle | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique Movchan, S. Sizov, F. Tetyorkin, V. |
| title | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_full | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_fullStr | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_full_unstemmed | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_short | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_sort | photosensitive heterostructures cdte-pbte prepared by hot-wall technique |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119065 |
| work_keys_str_mv | AT movchans photosensitiveheterostructurescdtepbtepreparedbyhotwalltechnique AT sizovf photosensitiveheterostructurescdtepbtepreparedbyhotwalltechnique AT tetyorkinv photosensitiveheterostructurescdtepbtepreparedbyhotwalltechnique |