Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Movchan, S., Sizov, F., Tetyorkin, V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119065
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ.

Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) re...