Varistor-like current-voltage characteristic of porous silicon

The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:1999
Hauptverfasser: Vakulenko, O.V., Kondratenko, S.V., Shutov, B.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119066
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
author_facet Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
citation_txt Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism of the visible luminescence in PS.
first_indexed 2025-11-24T02:24:02Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-24T02:24:02Z
publishDate 1999
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
2017-06-03T04:58:04Z
2017-06-03T04:58:04Z
1999
Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 72.80.Ng, s5.11
https://nasplib.isofts.kiev.ua/handle/123456789/119066
The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism of the visible luminescence in PS.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Varistor-like current-voltage characteristic of porous silicon
Article
published earlier
spellingShingle Varistor-like current-voltage characteristic of porous silicon
Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
title Varistor-like current-voltage characteristic of porous silicon
title_full Varistor-like current-voltage characteristic of porous silicon
title_fullStr Varistor-like current-voltage characteristic of porous silicon
title_full_unstemmed Varistor-like current-voltage characteristic of porous silicon
title_short Varistor-like current-voltage characteristic of porous silicon
title_sort varistor-like current-voltage characteristic of porous silicon
url https://nasplib.isofts.kiev.ua/handle/123456789/119066
work_keys_str_mv AT vakulenkoov varistorlikecurrentvoltagecharacteristicofporoussilicon
AT kondratenkosv varistorlikecurrentvoltagecharacteristicofporoussilicon
AT shutovbm varistorlikecurrentvoltagecharacteristicofporoussilicon