Semiconductor sensors for dosimetry of epithermal neutrons
Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result,...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119067 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Semiconductor sensors for dosimetry of epithermal neutrons / P.G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L.I. Barabash, T.I. Kibkalo, V.F. Lastovetsky, A.P. Litovchenko, M.B. Pinkovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 90-91. — Бібліогр.: 4 назв. — англ. |