Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автори: Khatsevich, I., Melnik, V., Popov, V., Romanyuk, B., Fedulov, V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119068
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ.

The results of experimental researches of photoluminescence (PL) spectra in
 Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures
 with high-temperature (1100 °C) and following low-temperature annealings in various
 regimes are given. We have found that additional low-temperature treatments in definite
 regimes result in substantial increase of the PL intensity, thus a maximum effect is
 observed after annealing in air. The possible mechanisms of the obtained effects are
 discussed. Those are based on supposition about the dominating contribution of
 luminescence through the electronic states on SiO₂-Si nanoclaster interfaces, which is
 related to defect and impurity complexes. It has been shown that growth of the PL
 intensity is governed by two effects: generation of new centers of radiative
 recombination on the nanocrystal-dielectric matrix interfaces, and passivation of nonradiative
 recombination centers.