Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
Presented paper is devoted to studying the methods to prepare epitaxial films of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the Hall mobility of charge carriers in these films. It is revealed that the derived dependences μH (T) for the samples on values of the e...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2008 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119069 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Presented paper is devoted to studying the methods to prepare epitaxial films
of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
Hall mobility of charge carriers in these films. It is revealed that the derived dependences
μH (T) for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the
temperature course of mobility in the majority of samples and can be explained via the
dispersion of acoustic oscillations in the lattice and presence of a temperature
dependence on the effective mass.
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| ISSN: | 1560-8034 |