Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon

Presented paper is devoted to studying the methods to prepare epitaxial films
 of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
 Hall mobility of charge carriers in these films. It is revealed that the derived dependences
 μH (T) for the sa...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2008
Main Authors: Hasanov, H.A., Murguzov, M.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119069
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Hasanov, H.A.
Murguzov, M.I.
author_facet Hasanov, H.A.
Murguzov, M.I.
citation_txt Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Presented paper is devoted to studying the methods to prepare epitaxial films
 of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
 Hall mobility of charge carriers in these films. It is revealed that the derived dependences
 μH (T) for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the
 temperature course of mobility in the majority of samples and can be explained via the
 dispersion of acoustic oscillations in the lattice and presence of a temperature
 dependence on the effective mass.
first_indexed 2025-12-01T15:49:22Z
format Article
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id nasplib_isofts_kiev_ua-123456789-119069
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-01T15:49:22Z
publishDate 2008
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Hasanov, H.A.
Murguzov, M.I.
2017-06-03T05:02:35Z
2017-06-03T05:02:35Z
2008
Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 68.55.Ac, 73.50.Jt
https://nasplib.isofts.kiev.ua/handle/123456789/119069
Presented paper is devoted to studying the methods to prepare epitaxial films
 of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
 Hall mobility of charge carriers in these films. It is revealed that the derived dependences
 μH (T) for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the
 temperature course of mobility in the majority of samples and can be explained via the
 dispersion of acoustic oscillations in the lattice and presence of a temperature
 dependence on the effective mass.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
Article
published earlier
spellingShingle Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
Hasanov, H.A.
Murguzov, M.I.
title Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
title_full Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
title_fullStr Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
title_full_unstemmed Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
title_short Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
title_sort hall mobility of charge carriers in films of (pbx)₁₋x (sm₂x₃)x semiconductors formed on porous silicon
url https://nasplib.isofts.kiev.ua/handle/123456789/119069
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