Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon
Presented paper is devoted to studying the methods to prepare epitaxial films
 of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
 Hall mobility of charge carriers in these films. It is revealed that the derived dependences
 μH (T) for the sa...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119069 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862649792870481920 |
|---|---|
| author | Hasanov, H.A. Murguzov, M.I. |
| author_facet | Hasanov, H.A. Murguzov, M.I. |
| citation_txt | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Presented paper is devoted to studying the methods to prepare epitaxial films
of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
Hall mobility of charge carriers in these films. It is revealed that the derived dependences
μH (T) for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the
temperature course of mobility in the majority of samples and can be explained via the
dispersion of acoustic oscillations in the lattice and presence of a temperature
dependence on the effective mass.
|
| first_indexed | 2025-12-01T15:49:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119069 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T15:49:22Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Hasanov, H.A. Murguzov, M.I. 2017-06-03T05:02:35Z 2017-06-03T05:02:35Z 2008 Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 68.55.Ac, 73.50.Jt https://nasplib.isofts.kiev.ua/handle/123456789/119069 Presented paper is devoted to studying the methods to prepare epitaxial films
 of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
 Hall mobility of charge carriers in these films. It is revealed that the derived dependences
 μH (T) for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the
 temperature course of mobility in the majority of samples and can be explained via the
 dispersion of acoustic oscillations in the lattice and presence of a temperature
 dependence on the effective mass. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon Article published earlier |
| spellingShingle | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon Hasanov, H.A. Murguzov, M.I. |
| title | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon |
| title_full | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon |
| title_fullStr | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon |
| title_full_unstemmed | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon |
| title_short | Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon |
| title_sort | hall mobility of charge carriers in films of (pbx)₁₋x (sm₂x₃)x semiconductors formed on porous silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119069 |
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