The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Authors: Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119071
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment / E.Yu. Kolyadina, R.V. Konakova, L.A. Matveeva, V.F. Mitin, V.V. Shynkarenko, E. Atanassova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 311-318. — Бібліогр.: 32 назв. — англ.

The effect of short-term microwave treatment (MT) on the electronic
 properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The
 samples of two types were studied: check ones (batch I) and those exposed to previous
 MT (batch II). The samples were aged (hold in air) at a temperature of ~300 K for two
 years. After that, they were exposed to MT during 2, 4, 6 and 8 s. Both before and after
 two-year aging and further MT, we measured, for all samples, the spectra of surfacebarrier
 electroreflectance (SBER) and concentration depth profiles of the components in
 the structure, as well as the radii of curvature of heterosystem from which the intrinsic
 stress (IS) values were calculated. It was found that the transition energy Eg grows with
 time of MT for both type samples. This corresponds to decrease of compressing ISs in
 27 % in the check sample (with more number of defect) and by 11 % in that previously
 exposed to MT. This fact indicates structural-impurity ordering of the Si−SiOx interface.
 The surface quantum-dimensional effect occurred after MT. After two-year aging, energy
 quantization was observed in the previously irradiated sample for 6 s and in the check
 sample (with more number of defects) after MT for 8 s. The most probable mechanism of
 improvement of the near-surface properties of SiOx−Si interface is discussed.