The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment
The effect of short-term microwave treatment (MT) on the electronic properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The samples of two types were studied: check ones (batch I) and those exposed to previous MT (batch II). The samples were aged (hold in air) at a te...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119071 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment / E.Yu. Kolyadina, R.V. Konakova, L.A. Matveeva, V.F. Mitin, V.V. Shynkarenko, E. Atanassova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 311-318. — Бібліогр.: 32 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119071 |
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dspace |
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Kolyadina, E.Yu. Konakova, R.V. Matveeva, L.A. Mitin, V.F. Shynkarenko, V.V. Atanassova, E. 2017-06-03T05:03:50Z 2017-06-03T05:03:50Z 2008 The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment / E.Yu. Kolyadina, R.V. Konakova, L.A. Matveeva, V.F. Mitin, V.V. Shynkarenko, E. Atanassova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 311-318. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 42.70.-a, 61.72.Ss, 61.80.Ed, 77.84.Fa https://nasplib.isofts.kiev.ua/handle/123456789/119071 The effect of short-term microwave treatment (MT) on the electronic properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The samples of two types were studied: check ones (batch I) and those exposed to previous MT (batch II). The samples were aged (hold in air) at a temperature of ~300 K for two years. After that, they were exposed to MT during 2, 4, 6 and 8 s. Both before and after two-year aging and further MT, we measured, for all samples, the spectra of surfacebarrier electroreflectance (SBER) and concentration depth profiles of the components in the structure, as well as the radii of curvature of heterosystem from which the intrinsic stress (IS) values were calculated. It was found that the transition energy Eg grows with time of MT for both type samples. This corresponds to decrease of compressing ISs in 27 % in the check sample (with more number of defect) and by 11 % in that previously exposed to MT. This fact indicates structural-impurity ordering of the Si−SiOx interface. The surface quantum-dimensional effect occurred after MT. After two-year aging, energy quantization was observed in the previously irradiated sample for 6 s and in the check sample (with more number of defects) after MT for 8 s. The most probable mechanism of improvement of the near-surface properties of SiOx−Si interface is discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment |
| spellingShingle |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment Kolyadina, E.Yu. Konakova, R.V. Matveeva, L.A. Mitin, V.F. Shynkarenko, V.V. Atanassova, E. |
| title_short |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment |
| title_full |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment |
| title_fullStr |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment |
| title_full_unstemmed |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment |
| title_sort |
features of structural-impurity ordering of interfaces in ta₂o₅-p-si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment |
| author |
Kolyadina, E.Yu. Konakova, R.V. Matveeva, L.A. Mitin, V.F. Shynkarenko, V.V. Atanassova, E. |
| author_facet |
Kolyadina, E.Yu. Konakova, R.V. Matveeva, L.A. Mitin, V.F. Shynkarenko, V.V. Atanassova, E. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of short-term microwave treatment (MT) on the electronic
properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The
samples of two types were studied: check ones (batch I) and those exposed to previous
MT (batch II). The samples were aged (hold in air) at a temperature of ~300 K for two
years. After that, they were exposed to MT during 2, 4, 6 and 8 s. Both before and after
two-year aging and further MT, we measured, for all samples, the spectra of surfacebarrier
electroreflectance (SBER) and concentration depth profiles of the components in
the structure, as well as the radii of curvature of heterosystem from which the intrinsic
stress (IS) values were calculated. It was found that the transition energy Eg grows with
time of MT for both type samples. This corresponds to decrease of compressing ISs in
27 % in the check sample (with more number of defect) and by 11 % in that previously
exposed to MT. This fact indicates structural-impurity ordering of the Si−SiOx interface.
The surface quantum-dimensional effect occurred after MT. After two-year aging, energy
quantization was observed in the previously irradiated sample for 6 s and in the check
sample (with more number of defects) after MT for 8 s. The most probable mechanism of
improvement of the near-surface properties of SiOx−Si interface is discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119071 |
| citation_txt |
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment / E.Yu. Kolyadina, R.V. Konakova, L.A. Matveeva, V.F. Mitin, V.V. Shynkarenko, E. Atanassova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 311-318. — Бібліогр.: 32 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-12-01T09:24:32Z |
| last_indexed |
2025-12-01T09:24:32Z |
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