Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Author: Lokot, L.O.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119073
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells / L.O. Lokot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 364-369. — Бібліогр.: 36 назв. — англ.

A study for the effects of size quantization and strain effects on the valence
 band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende
 GaN quantum wells is presented. In the framework of the effective mass theory, the
 Schrödinger equation is solved for the valence bands with a 3×3 block Hamiltonian. The
 results are illustrated for the GaN/Al₀.₁₉Ga₀.₈₁N quantum well. It is shown, that the biaxial
 strain causes quite significant changes to the gain spectra in spatially confined structures.
 It is shown, that laser effect is suppressed with arising of the circular loop of valence
 band maxima in the heterostructure under the tensile strain, while under the compressive
 strain, the stimulated emission is pronounced. Our results show the internal strain effects
 are important in optical properties of GaN and associated quantum well structures.