Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Author: Lokot, L.O.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119073
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells / L.O. Lokot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 364-369. — Бібліогр.: 36 назв. — англ.

A study for the effects of size quantization and strain effects on the valence
 band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende
 GaN quantum wells is presented. In the framework of the effective mass theory, the
 Schrödinger equation is...