Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of
 hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and
 current-voltage techniques at different temperatures. It was shown that the large leakage
 current at a negati...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119074 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862745673135292416 |
|---|---|
| author | Nazarov, A.N. Gomeniuk, Y.V. Gomeniuk, Y.Y. Lysenko, V.S. Gottlob, H.D.B. Schmidt, M. Lemme, M.C. Czernohorsky, M. Ostenc, H.J. |
| author_facet | Nazarov, A.N. Gomeniuk, Y.V. Gomeniuk, Y.Y. Lysenko, V.S. Gottlob, H.D.B. Schmidt, M. Lemme, M.C. Czernohorsky, M. Ostenc, H.J. |
| citation_txt | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of
hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and
current-voltage techniques at different temperatures. It was shown that the large leakage
current at a negative gate voltage causes the reversible trapping of the positive charge in
the dielectric layer, without electrical degradation of the dielectric and dielectricsemiconductor
interface. The capture cross-sections of the hole traps are around 10⁻¹⁸ and
2 × 10⁻²⁰ cm²
. The respective shift of the C–V curve correlates with a “plateau” at the
capacitance corresponding to weak accumulation at the silicon interface.
|
| first_indexed | 2025-12-07T20:41:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119074 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:41:52Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nazarov, A.N. Gomeniuk, Y.V. Gomeniuk, Y.Y. Lysenko, V.S. Gottlob, H.D.B. Schmidt, M. Lemme, M.C. Czernohorsky, M. Ostenc, H.J. 2017-06-03T05:06:29Z 2017-06-03T05:06:29Z 2008 Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/119074 Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of
 hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and
 current-voltage techniques at different temperatures. It was shown that the large leakage
 current at a negative gate voltage causes the reversible trapping of the positive charge in
 the dielectric layer, without electrical degradation of the dielectric and dielectricsemiconductor
 interface. The capture cross-sections of the hole traps are around 10⁻¹⁸ and
 2 × 10⁻²⁰ cm²
 . The respective shift of the C–V curve correlates with a “plateau” at the
 capacitance corresponding to weak accumulation at the silicon interface. This work has been partly funded by the European
 Commission under the frame of the Network of
 Excellence “SINANO” (Silicon-based Nanodevices,
 IST-506844) and the German Federal Ministry of
 Education and Research (BMBF) in the “MEGA EPOS”
 project (13N9260). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric Article published earlier |
| spellingShingle | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric Nazarov, A.N. Gomeniuk, Y.V. Gomeniuk, Y.Y. Lysenko, V.S. Gottlob, H.D.B. Schmidt, M. Lemme, M.C. Czernohorsky, M. Ostenc, H.J. |
| title | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric |
| title_full | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric |
| title_fullStr | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric |
| title_full_unstemmed | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric |
| title_short | Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric |
| title_sort | novel hysteresis effect in ultrathin epitaxial gd₂o₃ high-k dielectric |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119074 |
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