The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
The adsorboelectric effect arising in multilayered semiconductor structures
 based on the porous Si with catalytically active Pd electrodes due to action of low
 concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
 studied. The kinetic dependences...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |