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The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers

The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2008
Main Authors: Solntsev, V.S., Gorbanyuk, T.I., Litovchenko, V.G., Evtukh, A.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119080
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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