Size effects in thin n-PbTe films
The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by thermal evaporation of n-type PbTe polycrystals doped with InTe in vacuum onto...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2014-12-29 |
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| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2014-12-29
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119083 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Size effects in thin n-PbTe films / S.I.Men'shikova, E.I.Rogacheva, A.Yu.Sipatov, Ye.N.Zubarev // Functional Materials. — 2015. — Т. 22, № 1. — С. 14-19. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862670081163526144 |
|---|---|
| author | Men'shikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Zubarev, Ye.N. |
| author_facet | Men'shikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Zubarev, Ye.N. |
| citation_txt | Size effects in thin n-PbTe films / S.I.Men'shikova, E.I.Rogacheva, A.Yu.Sipatov, Ye.N.Zubarev // Functional Materials. — 2015. — Т. 22, № 1. — С. 14-19. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by thermal evaporation of n-type PbTe polycrystals doped with InTe in vacuum onto (001)KCl substrates was investigated. It was established that at d ≈ 20 nm, an inversion of the conductivity type (p → n) occurs, which is attributed to a change in the thermodynamic equilibrium conditions in films as compared with bulk crystals and\or to partial re-evaporation of In atoms. In the thickness range d < 20 nm, extrema in the d-dependences of the properties are detected at d ≈ 13 nm, and at d > 20 nm, the thickness dependences of the properties exhibit an oscillatory behavior with the period Δ d ≈ 12 nm. The observed oscillatory character of the thickness dependences of the kinetic coefficients is attributed to the manifestation of quantum size effects. The theoretical S(d) dependence calculated in the approximation of size quantization taking into account d-dependences of the Fermi energy and a number of subbands is in good agreement with the experimental one with regard to the oscillation period.
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| first_indexed | 2025-12-07T15:29:27Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119083 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T15:29:27Z |
| publishDate | 2014-12-29 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Men'shikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Zubarev, Ye.N. 2017-06-03T18:45:52Z 2017-06-03T18:45:52Z 2014-12-29 Size effects in thin n-PbTe films / S.I.Men'shikova, E.I.Rogacheva, A.Yu.Sipatov, Ye.N.Zubarev // Functional Materials. — 2015. — Т. 22, № 1. — С. 14-19. — Бібліогр.: 19 назв. — англ. 1027-5495 DOI: http://dx.doi.org/10.15407/fm22.01.014 https://nasplib.isofts.kiev.ua/handle/123456789/119083 The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by thermal evaporation of n-type PbTe polycrystals doped with InTe in vacuum onto (001)KCl substrates was investigated. It was established that at d ≈ 20 nm, an inversion of the conductivity type (p → n) occurs, which is attributed to a change in the thermodynamic equilibrium conditions in films as compared with bulk crystals and\or to partial re-evaporation of In atoms. In the thickness range d < 20 nm, extrema in the d-dependences of the properties are detected at d ≈ 13 nm, and at d > 20 nm, the thickness dependences of the properties exhibit an oscillatory behavior with the period Δ d ≈ 12 nm. The observed oscillatory character of the thickness dependences of the kinetic coefficients is attributed to the manifestation of quantum size effects. The theoretical S(d) dependence calculated in the approximation of size quantization taking into account d-dependences of the Fermi energy and a number of subbands is in good agreement with the experimental one with regard to the oscillation period. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Size effects in thin n-PbTe films Article published earlier |
| spellingShingle | Size effects in thin n-PbTe films Men'shikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Zubarev, Ye.N. Characterization and properties |
| title | Size effects in thin n-PbTe films |
| title_full | Size effects in thin n-PbTe films |
| title_fullStr | Size effects in thin n-PbTe films |
| title_full_unstemmed | Size effects in thin n-PbTe films |
| title_short | Size effects in thin n-PbTe films |
| title_sort | size effects in thin n-pbte films |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119083 |
| work_keys_str_mv | AT menshikovasi sizeeffectsinthinnpbtefilms AT rogachevaei sizeeffectsinthinnpbtefilms AT sipatovayu sizeeffectsinthinnpbtefilms AT zubarevyen sizeeffectsinthinnpbtefilms |