Size effects in thin n-PbTe films

The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by thermal evaporation of n-type PbTe polycrystals doped with InTe in vacuum onto...

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Veröffentlicht in:Functional Materials
Datum:2014-12-29
Hauptverfasser: Men'shikova, S.I., Rogacheva, E.I., Sipatov, A.Yu., Zubarev, Ye.N.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2014-12-29
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119083
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Size effects in thin n-PbTe films / S.I.Men'shikova, E.I.Rogacheva, A.Yu.Sipatov, Ye.N.Zubarev // Functional Materials. — 2015. — Т. 22, № 1. — С. 14-19. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119083
record_format dspace
spelling Men'shikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Zubarev, Ye.N.
2017-06-03T18:45:52Z
2017-06-03T18:45:52Z
2014-12-29
Size effects in thin n-PbTe films / S.I.Men'shikova, E.I.Rogacheva, A.Yu.Sipatov, Ye.N.Zubarev // Functional Materials. — 2015. — Т. 22, № 1. — С. 14-19. — Бібліогр.: 19 назв. — англ.
1027-5495
DOI: http://dx.doi.org/10.15407/fm22.01.014
https://nasplib.isofts.kiev.ua/handle/123456789/119083
The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by thermal evaporation of n-type PbTe polycrystals doped with InTe in vacuum onto (001)KCl substrates was investigated. It was established that at d ≈ 20 nm, an inversion of the conductivity type (p → n) occurs, which is attributed to a change in the thermodynamic equilibrium conditions in films as compared with bulk crystals and\or to partial re-evaporation of In atoms. In the thickness range d < 20 nm, extrema in the d-dependences of the properties are detected at d ≈ 13 nm, and at d > 20 nm, the thickness dependences of the properties exhibit an oscillatory behavior with the period Δ d ≈ 12 nm. The observed oscillatory character of the thickness dependences of the kinetic coefficients is attributed to the manifestation of quantum size effects. The theoretical S(d) dependence calculated in the approximation of size quantization taking into account d-dependences of the Fermi energy and a number of subbands is in good agreement with the experimental one with regard to the oscillation period.
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НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Size effects in thin n-PbTe films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Size effects in thin n-PbTe films
spellingShingle Size effects in thin n-PbTe films
Men'shikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Zubarev, Ye.N.
Characterization and properties
title_short Size effects in thin n-PbTe films
title_full Size effects in thin n-PbTe films
title_fullStr Size effects in thin n-PbTe films
title_full_unstemmed Size effects in thin n-PbTe films
title_sort size effects in thin n-pbte films
author Men'shikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Zubarev, Ye.N.
author_facet Men'shikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Zubarev, Ye.N.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2014-12-29
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
description The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by thermal evaporation of n-type PbTe polycrystals doped with InTe in vacuum onto (001)KCl substrates was investigated. It was established that at d ≈ 20 nm, an inversion of the conductivity type (p → n) occurs, which is attributed to a change in the thermodynamic equilibrium conditions in films as compared with bulk crystals and\or to partial re-evaporation of In atoms. In the thickness range d < 20 nm, extrema in the d-dependences of the properties are detected at d ≈ 13 nm, and at d > 20 nm, the thickness dependences of the properties exhibit an oscillatory behavior with the period Δ d ≈ 12 nm. The observed oscillatory character of the thickness dependences of the kinetic coefficients is attributed to the manifestation of quantum size effects. The theoretical S(d) dependence calculated in the approximation of size quantization taking into account d-dependences of the Fermi energy and a number of subbands is in good agreement with the experimental one with regard to the oscillation period.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/119083
citation_txt Size effects in thin n-PbTe films / S.I.Men'shikova, E.I.Rogacheva, A.Yu.Sipatov, Ye.N.Zubarev // Functional Materials. — 2015. — Т. 22, № 1. — С. 14-19. — Бібліогр.: 19 назв. — англ.
work_keys_str_mv AT menshikovasi sizeeffectsinthinnpbtefilms
AT rogachevaei sizeeffectsinthinnpbtefilms
AT sipatovayu sizeeffectsinthinnpbtefilms
AT zubarevyen sizeeffectsinthinnpbtefilms
first_indexed 2025-12-07T15:29:27Z
last_indexed 2025-12-07T15:29:27Z
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