Interface electronic properties of eterojunctions based on nanocrystalline silicon
For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto s...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119107 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862716479287328768 |
|---|---|
| author | Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. |
| author_facet | Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. |
| citation_txt | Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto substrates situated at a distance from the target and onto the plane of target were studied. The temperature dependencies of concentration of charge carriers captured in the traps in the heterojunction interface, and of distribution of density of surface electron states on energy were calculated. The connections between conditions of heterojunction fabrication and their electronic properties are clarified.
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| first_indexed | 2025-12-07T18:05:31Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119107 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:05:31Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. 2017-06-04T11:49:44Z 2017-06-04T11:49:44Z 1999 Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.20.D, 81.15.F https://nasplib.isofts.kiev.ua/handle/123456789/119107 For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto substrates situated at a distance from the target and onto the plane of target were studied. The temperature dependencies of concentration of charge carriers captured in the traps in the heterojunction interface, and of distribution of density of surface electron states on energy were calculated. The connections between conditions of heterojunction fabrication and their electronic properties are clarified. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Interface electronic properties of eterojunctions based on nanocrystalline silicon Article published earlier |
| spellingShingle | Interface electronic properties of eterojunctions based on nanocrystalline silicon Kaganovich, E.B. Kirillova, S.I. Manoilov, E.G. Primachenko, V.E. Svechnikov, S.V. |
| title | Interface electronic properties of eterojunctions based on nanocrystalline silicon |
| title_full | Interface electronic properties of eterojunctions based on nanocrystalline silicon |
| title_fullStr | Interface electronic properties of eterojunctions based on nanocrystalline silicon |
| title_full_unstemmed | Interface electronic properties of eterojunctions based on nanocrystalline silicon |
| title_short | Interface electronic properties of eterojunctions based on nanocrystalline silicon |
| title_sort | interface electronic properties of eterojunctions based on nanocrystalline silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119107 |
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