Interface electronic properties of eterojunctions based on nanocrystalline silicon

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Kaganovich, E.B., Kirillova, S.I., Manoilov, E.G., Primachenko, V.E., Svechnikov, S.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119107
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ.

For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto s...