Self-consistent method for optimization of parameters of diode temperature sensors
In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically the semiconductor diode structures, the relations are obtained for estimati...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119108 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Self-consistent method for optimization of parameters of diode temperature sensors / N.R. Kulish, Yu.M. Shwarts, V.L. Borblik, Ye.F. Venger, V.N. Sokolov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 15-27. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862634085772427264 |
|---|---|
| author | Kulish, N.R. Shwarts, Yu.M. Borblik, V.L. Venger, Ye.F. Sokolov, V.N. |
| author_facet | Kulish, N.R. Shwarts, Yu.M. Borblik, V.L. Venger, Ye.F. Sokolov, V.N. |
| citation_txt | Self-consistent method for optimization of parameters of diode temperature sensors / N.R. Kulish, Yu.M. Shwarts, V.L. Borblik, Ye.F. Venger, V.N. Sokolov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 15-27. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically the semiconductor diode structures, the relations are obtained for estimation of parameters of the diode temperature sensor. The set of these parameters provides either the maximum extent of a thermometric characteristic toward the higher temperature range, or maximum sensitivity of the diode temperature sensor. For Ge, Si, GaAs diode temperature sensors with n⁺p- and р⁺n- junctions the limits of thermometric characteristics were determined, together with temperature dependencies of sensitivity, static and dynamic resistance calculated for cases of the maximum length of the thermometric characteristic and of maximum sensitivity. It has been shown that experimentally measured characteristics of diode temperature sensors are within the ranges determined by the limiting characteristics. The ways of further improvement of diode temperature sensors are discussed.
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| first_indexed | 2025-11-30T15:24:32Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119108 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T15:24:32Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kulish, N.R. Shwarts, Yu.M. Borblik, V.L. Venger, Ye.F. Sokolov, V.N. 2017-06-04T11:50:55Z 2017-06-04T11:50:55Z 1999 Self-consistent method for optimization of parameters of diode temperature sensors / N.R. Kulish, Yu.M. Shwarts, V.L. Borblik, Ye.F. Venger, V.N. Sokolov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 15-27. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 07.07.D https://nasplib.isofts.kiev.ua/handle/123456789/119108 In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically the semiconductor diode structures, the relations are obtained for estimation of parameters of the diode temperature sensor. The set of these parameters provides either the maximum extent of a thermometric characteristic toward the higher temperature range, or maximum sensitivity of the diode temperature sensor. For Ge, Si, GaAs diode temperature sensors with n⁺p- and р⁺n- junctions the limits of thermometric characteristics were determined, together with temperature dependencies of sensitivity, static and dynamic resistance calculated for cases of the maximum length of the thermometric characteristic and of maximum sensitivity. It has been shown that experimentally measured characteristics of diode temperature sensors are within the ranges determined by the limiting characteristics. The ways of further improvement of diode temperature sensors are discussed. This work was carried out in the frames of the STCU
 Project No. 477. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Self-consistent method for optimization of parameters of diode temperature sensors Article published earlier |
| spellingShingle | Self-consistent method for optimization of parameters of diode temperature sensors Kulish, N.R. Shwarts, Yu.M. Borblik, V.L. Venger, Ye.F. Sokolov, V.N. |
| title | Self-consistent method for optimization of parameters of diode temperature sensors |
| title_full | Self-consistent method for optimization of parameters of diode temperature sensors |
| title_fullStr | Self-consistent method for optimization of parameters of diode temperature sensors |
| title_full_unstemmed | Self-consistent method for optimization of parameters of diode temperature sensors |
| title_short | Self-consistent method for optimization of parameters of diode temperature sensors |
| title_sort | self-consistent method for optimization of parameters of diode temperature sensors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119108 |
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