Self-consistent method for optimization of parameters of diode temperature sensors
In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically the semiconductor diode structures, the relations are obtained for estimati...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119108 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Self-consistent method for optimization of parameters of diode temperature sensors / N.R. Kulish, Yu.M. Shwarts, V.L. Borblik, Ye.F. Venger, V.N. Sokolov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 15-27. — Бібліогр.: 24 назв. — англ. |