Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field
The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, when the change of the potential of heavily doped front layer under contacts and...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 1999 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119110 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On the collection of photocurrent in solar cells with a contact grid / A.V. Sachenko, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 42-44. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862657186040119296 |
|---|---|
| author | Sachenko, A.V. Gorban, A.P. |
| author_facet | Sachenko, A.V. Gorban, A.P. |
| citation_txt | On the collection of photocurrent in solar cells with a contact grid / A.V. Sachenko, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 42-44. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, when the change of the potential of heavily doped front layer under contacts and between contacts is less than kT/q, the characteristic length L can be introduced with a meaning of the distance at which the photocurrent reduces by a factor of e due to recombination. Variation of the filling factor of SC IVC due to the presence of contact grid is then analytically expressed via this length.
It is found that in unoptimized case, when the distance between contact strips l is much longer than L, the photocurrent collection is determined by lesser, as compared to L, distance, at which the front layer potential changes from the value of Vm under contacts to the open- circuit voltage between the contacts. In this case the change of IVC filling factor due to the presence of contact grid is expressed again analytically via this new characteristic length.
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| first_indexed | 2025-12-02T05:37:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119110 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T05:37:14Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Gorban, A.P. 2017-06-04T11:52:39Z 2017-06-04T11:52:39Z 1999 On the collection of photocurrent in solar cells with a contact grid / A.V. Sachenko, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 42-44. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J https://nasplib.isofts.kiev.ua/handle/123456789/119110 The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, when the change of the potential of heavily doped front layer under contacts and between contacts is less than kT/q, the characteristic length L can be introduced with a meaning of the distance at which the photocurrent reduces by a factor of e due to recombination. Variation of the filling factor of SC IVC due to the presence of contact grid is then analytically expressed via this length.
 It is found that in unoptimized case, when the distance between contact strips l is much longer than L, the photocurrent collection is determined by lesser, as compared to L, distance, at which the front layer potential changes from the value of Vm under contacts to the open- circuit voltage between the contacts. In this case the change of IVC filling factor due to the presence of contact grid is expressed again analytically via this new characteristic length. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field Article published earlier |
| spellingShingle | Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field Sachenko, A.V. Gorban, A.P. |
| title | Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field |
| title_full | Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field |
| title_fullStr | Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field |
| title_full_unstemmed | Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field |
| title_short | Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field |
| title_sort | polarization unstabilities in a quasi-isotropic he-ne laser in axial magnetic field |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119110 |
| work_keys_str_mv | AT sachenkoav polarizationunstabilitiesinaquasiisotropichenelaserinaxialmagneticfield AT gorbanap polarizationunstabilitiesinaquasiisotropichenelaserinaxialmagneticfield |