Oksanich, A., Pritchin, S., & Vasheruk, A. (2004). Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Oksanich, A.P, S.E Pritchin, und A.V Vasheruk. "Mathematic Modeling the Oxygen Distribution Mechanism in Si Ingots During Growing Processes." Semiconductor Physics Quantum Electronics & Optoelectronics 2004.
MLA-Zitierstil (8. Ausg.)Oksanich, A.P, et al. "Mathematic Modeling the Oxygen Distribution Mechanism in Si Ingots During Growing Processes." Semiconductor Physics Quantum Electronics & Optoelectronics, 2004.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.