Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines th...
Збережено в:
| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119116 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration. |
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