Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines th...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119116 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862634986781278208 |
|---|---|
| author | Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. |
| author_facet | Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. |
| citation_txt | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration.
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| first_indexed | 2025-11-30T16:57:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119116 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T16:57:01Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. 2017-06-04T15:51:17Z 2017-06-04T15:51:17Z 2004 Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 42.65; 42.70; 61.70 https://nasplib.isofts.kiev.ua/handle/123456789/119116 The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes Article published earlier |
| spellingShingle | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. |
| title | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_full | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_fullStr | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_full_unstemmed | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_short | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_sort | mathematic modeling the oxygen distribution mechanism in si ingots during growing processes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119116 |
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