Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Oksanich, A.P., Pritchin, S.E., Vasheruk, A.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119116
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ.

The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines th...