Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films
The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the r...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119117 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation.
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| ISSN: | 1560-8034 |