Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films
The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the r...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119117 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119117 |
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dspace |
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Gentsar, P.A. Kudryavtsev, A.A. 2017-06-04T15:52:49Z 2017-06-04T15:52:49Z 2004 Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.20; 78.66 https://nasplib.isofts.kiev.ua/handle/123456789/119117 The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| spellingShingle |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films Gentsar, P.A. Kudryavtsev, A.A. |
| title_short |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_full |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_fullStr |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_full_unstemmed |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films |
| title_sort |
radiation-stimulated relaxation of internal mechanical straines in homoepitaxial gap films |
| author |
Gentsar, P.A. Kudryavtsev, A.A. |
| author_facet |
Gentsar, P.A. Kudryavtsev, A.A. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119117 |
| citation_txt |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ. |
| work_keys_str_mv |
AT gentsarpa radiationstimulatedrelaxationofinternalmechanicalstrainesinhomoepitaxialgapfilms AT kudryavtsevaa radiationstimulatedrelaxationofinternalmechanicalstrainesinhomoepitaxialgapfilms |
| first_indexed |
2025-12-07T19:57:16Z |
| last_indexed |
2025-12-07T19:57:16Z |
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1850880752414097408 |