Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Mateleshko, N., Mitsa, V., Borkach, E.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119118
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ.

Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As₂S₃ glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As₂S₃ glasses with the continuously bonded matrix of the structure suitable for power optics using this basis.