Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses
Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119118 |
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| Zitieren: | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. |
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Mateleshko, N. Mitsa, V. Borkach, E. 2017-06-04T15:53:59Z 2017-06-04T15:53:59Z 2004 Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.43.Fs, 78.30.-j, 78.30.g https://nasplib.isofts.kiev.ua/handle/123456789/119118 Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As₂S₃ glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As₂S₃ glasses with the continuously bonded matrix of the structure suitable for power optics using this basis. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| spellingShingle |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses Mateleshko, N. Mitsa, V. Borkach, E. |
| title_short |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_full |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_fullStr |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_full_unstemmed |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_sort |
raman spectra and electron microscopic investigations of the sections of modified as₂s₃ glasses |
| author |
Mateleshko, N. Mitsa, V. Borkach, E. |
| author_facet |
Mateleshko, N. Mitsa, V. Borkach, E. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As₂S₃ glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As₂S₃ glasses with the continuously bonded matrix of the structure suitable for power optics using this basis.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119118 |
| citation_txt |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. |
| work_keys_str_mv |
AT mateleshkon ramanspectraandelectronmicroscopicinvestigationsofthesectionsofmodifiedas2s3glasses AT mitsav ramanspectraandelectronmicroscopicinvestigationsofthesectionsofmodifiedas2s3glasses AT borkache ramanspectraandelectronmicroscopicinvestigationsofthesectionsofmodifiedas2s3glasses |
| first_indexed |
2025-12-07T16:17:12Z |
| last_indexed |
2025-12-07T16:17:12Z |
| _version_ |
1850866907325923328 |