Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses
Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119118 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862692050294538240 |
|---|---|
| author | Mateleshko, N. Mitsa, V. Borkach, E. |
| author_facet | Mateleshko, N. Mitsa, V. Borkach, E. |
| citation_txt | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As₂S₃ glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As₂S₃ glasses with the continuously bonded matrix of the structure suitable for power optics using this basis.
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| first_indexed | 2025-12-07T16:17:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119118 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:17:12Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mateleshko, N. Mitsa, V. Borkach, E. 2017-06-04T15:53:59Z 2017-06-04T15:53:59Z 2004 Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.43.Fs, 78.30.-j, 78.30.g https://nasplib.isofts.kiev.ua/handle/123456789/119118 Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As₂S₃ glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As₂S₃ glasses with the continuously bonded matrix of the structure suitable for power optics using this basis. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses Article published earlier |
| spellingShingle | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses Mateleshko, N. Mitsa, V. Borkach, E. |
| title | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_full | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_fullStr | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_full_unstemmed | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_short | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
| title_sort | raman spectra and electron microscopic investigations of the sections of modified as₂s₃ glasses |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119118 |
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