Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses
Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | Mateleshko, N., Mitsa, V., Borkach, E. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119118 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. |
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