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Partial polarization switching in ferroelectrics-semiconductors with charged defects

We propose the phenomenological description of ferroelectric disordering caused by charged defects in ferroelectric-semiconductors. The good agreement between the obtained experimental results for PZT films and theoretical calculations has been shown.
 We suppose that proportional to the ave...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Morozovska, A.N., Eliseev, E.A., Cattan, E., Remiens, D.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119120
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Partial polarization switching in ferroelectrics-semiconductors with charged defects / A.N. Morozovska, E.A. Eliseev, E. Cattan, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 251-262. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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