Optical properties of dielectric layers with CeO₂

The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical charac...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2004
1. Verfasser: Semikina, T.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119127
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Optical properties of dielectric layers with CeO₂ / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 291-296. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119127
record_format dspace
spelling Semikina, T.V.
2017-06-04T16:24:24Z
2017-06-04T16:24:24Z
2004
Optical properties of dielectric layers with CeO₂ / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 291-296. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS: 77.55.+f, 78.66.-w
https://nasplib.isofts.kiev.ua/handle/123456789/119127
The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical characteristics of complex films WO₃ + CeO₂ and CeO₂+Dy₂O₃ are obtained. As a results of films investigation by ellipsometry the dependencies of refraction and extinction coefficients on incident beam energy are presented. The dielectric permittivity and energy band gapes are calculated. The refraction coefficients of films CeO₂ are 1.85–2.85 and are not more than 2.37 for complex films. Dielectric constant e of complex films are 3.57–4.16, and e =4.7 of CeO₂ film. The CeO₂, WO₃, and WO₃ + CeO₂ films have wide band gape Eg = 2.8–3.37 eV.
The author thanks A.N. Shmyryeva (NTUU "KPI") for the given samples and long time heading the authores work, V.G. Litovchenko for the consultation under results processing, Marion Friedrich and D.R.T. Zahn for the possibility to work in their laboratory of semiconductor physics in TU-Chemnitz, Germany. This work was financially supported by the grant from Ministry of Education of Saxon, Germany.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical properties of dielectric layers with CeO₂
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Optical properties of dielectric layers with CeO₂
spellingShingle Optical properties of dielectric layers with CeO₂
Semikina, T.V.
title_short Optical properties of dielectric layers with CeO₂
title_full Optical properties of dielectric layers with CeO₂
title_fullStr Optical properties of dielectric layers with CeO₂
title_full_unstemmed Optical properties of dielectric layers with CeO₂
title_sort optical properties of dielectric layers with ceo₂
author Semikina, T.V.
author_facet Semikina, T.V.
publishDate 2004
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical characteristics of complex films WO₃ + CeO₂ and CeO₂+Dy₂O₃ are obtained. As a results of films investigation by ellipsometry the dependencies of refraction and extinction coefficients on incident beam energy are presented. The dielectric permittivity and energy band gapes are calculated. The refraction coefficients of films CeO₂ are 1.85–2.85 and are not more than 2.37 for complex films. Dielectric constant e of complex films are 3.57–4.16, and e =4.7 of CeO₂ film. The CeO₂, WO₃, and WO₃ + CeO₂ films have wide band gape Eg = 2.8–3.37 eV.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119127
fulltext
citation_txt Optical properties of dielectric layers with CeO₂ / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 291-296. — Бібліогр.: 18 назв. — англ.
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