Optical properties of dielectric layers with CeO₂
The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical charac...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119127 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical properties of dielectric layers with CeO₂ / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 291-296. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862535528174321664 |
|---|---|
| author | Semikina, T.V. |
| author_facet | Semikina, T.V. |
| citation_txt | Optical properties of dielectric layers with CeO₂ / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 291-296. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical characteristics of complex films WO₃ + CeO₂ and CeO₂+Dy₂O₃ are obtained. As a results of films investigation by ellipsometry the dependencies of refraction and extinction coefficients on incident beam energy are presented. The dielectric permittivity and energy band gapes are calculated. The refraction coefficients of films CeO₂ are 1.85–2.85 and are not more than 2.37 for complex films. Dielectric constant e of complex films are 3.57–4.16, and e =4.7 of CeO₂ film. The CeO₂, WO₃, and WO₃ + CeO₂ films have wide band gape Eg = 2.8–3.37 eV.
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| first_indexed | 2025-11-24T10:14:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119127 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T10:14:37Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Semikina, T.V. 2017-06-04T16:24:24Z 2017-06-04T16:24:24Z 2004 Optical properties of dielectric layers with CeO₂ / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 291-296. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 77.55.+f, 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/119127 The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical characteristics of complex films WO₃ + CeO₂ and CeO₂+Dy₂O₃ are obtained. As a results of films investigation by ellipsometry the dependencies of refraction and extinction coefficients on incident beam energy are presented. The dielectric permittivity and energy band gapes are calculated. The refraction coefficients of films CeO₂ are 1.85–2.85 and are not more than 2.37 for complex films. Dielectric constant e of complex films are 3.57–4.16, and e =4.7 of CeO₂ film. The CeO₂, WO₃, and WO₃ + CeO₂ films have wide band gape Eg = 2.8–3.37 eV. The author thanks A.N. Shmyryeva (NTUU "KPI") for the given samples and long time heading the 
 authores work, V.G. Litovchenko for the consultation under results processing, Marion Friedrich 
 and D.R.T. Zahn for the possibility to work in their laboratory of semiconductor physics in 
 TU-Chemnitz, Germany. This work was financially supported by the grant from Ministry of Education of Saxon, Germany. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optical properties of dielectric layers with CeO₂ Article published earlier |
| spellingShingle | Optical properties of dielectric layers with CeO₂ Semikina, T.V. |
| title | Optical properties of dielectric layers with CeO₂ |
| title_full | Optical properties of dielectric layers with CeO₂ |
| title_fullStr | Optical properties of dielectric layers with CeO₂ |
| title_full_unstemmed | Optical properties of dielectric layers with CeO₂ |
| title_short | Optical properties of dielectric layers with CeO₂ |
| title_sort | optical properties of dielectric layers with ceo₂ |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119127 |
| work_keys_str_mv | AT semikinatv opticalpropertiesofdielectriclayerswithceo2 |