Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• Main Authors: Paranchych, S.Yu., Tanasyuk, Yu.V., Romanyuk, V.R., Romanyuk, O.S., Makogonenko, V.M., Andriychuk, M.D., Synylo, S.V., Ivonyak, Yu.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119135
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ.

Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively.