Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties
Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed i...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , , , , , , |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119135 |
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| Zitieren: | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862635901050421248 |
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| author | Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. |
| author_facet | Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. |
| citation_txt | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively.
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| first_indexed | 2025-11-30T20:49:47Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119135 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T20:49:47Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. 2017-06-04T16:47:00Z 2017-06-04T16:47:00Z 2004 Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 42.65; 42.70; 61.70 https://nasplib.isofts.kiev.ua/handle/123456789/119135 Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties Article published earlier |
| spellingShingle | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties Paranchych, S.Yu. Tanasyuk, Yu.V. Romanyuk, V.R. Romanyuk, O.S. Makogonenko, V.M. Andriychuk, M.D. Synylo, S.V. Ivonyak, Yu.I. |
| title | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
| title_full | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
| title_fullStr | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
| title_full_unstemmed | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
| title_short | Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties |
| title_sort | solid solutions of cdxhg₁₋xte:v:mn, cdxhg₁₋xte:ti:mn (x = 0.9 – 0.95): growth and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119135 |
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