The influence of ion implantation by phosphorous on structural changes in porous silicon
Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and quantitative differences in the thickness dependences of strains, values of maxim...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119136 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The influence of ion implantation by phosphorous on structural changes in porous silicon / Z. Swiatek, I. Lytvynchuk, I. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 231-235. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862681444105584640 |
|---|---|
| author | Swiatek, Z. Lytvynchuk, I. Fodchuk, I. |
| author_facet | Swiatek, Z. Lytvynchuk, I. Fodchuk, I. |
| citation_txt | The influence of ion implantation by phosphorous on structural changes in porous silicon / Z. Swiatek, I. Lytvynchuk, I. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 231-235. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and quantitative differences in the thickness dependences of strains, values of maximum strain, level of lattice disturbance and extension of elastic strains nave been revealed after different steps of treatment. The essential modification of photoluminescence spectra was observed in the porous layer after implantation by phosphorus ions in the process of natural aging.
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| first_indexed | 2025-12-07T15:50:39Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119136 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:50:39Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Swiatek, Z. Lytvynchuk, I. Fodchuk, I. 2017-06-04T16:48:43Z 2017-06-04T16:48:43Z 2004 The influence of ion implantation by phosphorous on structural changes in porous silicon / Z. Swiatek, I. Lytvynchuk, I. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 231-235. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 61.43.Gt https://nasplib.isofts.kiev.ua/handle/123456789/119136 Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and quantitative differences in the thickness dependences of strains, values of maximum strain, level of lattice disturbance and extension of elastic strains nave been revealed after different steps of treatment. The essential modification of photoluminescence spectra was observed in the porous layer after implantation by phosphorus ions in the process of natural aging. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The influence of ion implantation by phosphorous on structural changes in porous silicon Article published earlier |
| spellingShingle | The influence of ion implantation by phosphorous on structural changes in porous silicon Swiatek, Z. Lytvynchuk, I. Fodchuk, I. |
| title | The influence of ion implantation by phosphorous on structural changes in porous silicon |
| title_full | The influence of ion implantation by phosphorous on structural changes in porous silicon |
| title_fullStr | The influence of ion implantation by phosphorous on structural changes in porous silicon |
| title_full_unstemmed | The influence of ion implantation by phosphorous on structural changes in porous silicon |
| title_short | The influence of ion implantation by phosphorous on structural changes in porous silicon |
| title_sort | influence of ion implantation by phosphorous on structural changes in porous silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119136 |
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