The influence of ion implantation by phosphorous on structural changes in porous silicon

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• ISSN: 1560-8034
• Main Authors: Swiatek, Z., Lytvynchuk, I., Fodchuk, I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119136
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The influence of ion implantation by phosphorous on structural changes in porous silicon / Z. Swiatek, I. Lytvynchuk, I. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 231-235. — Бібліогр.: 17 назв. — англ.

Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and quantitative differences in the thickness dependences of strains, values of maxim...