Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• Main Authors: Yodgorova, D.M., Karimov, A.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119202
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides / D.M. Yodgorova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 377-379. — Бібліогр.: 7 назв. — англ.

Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing element can possess a phase non-uniform boundary interface or goffered surface. H...