Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals
The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due to Mn²⁺ and Cr³⁺ ions, accordingly. The experimental results were explained u...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119203 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals / F.V. Motsnyi, V.G. Dorogan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119203 |
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dspace |
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Motsnyi, F.V. Dorogan, V.G. 2017-06-05T09:19:06Z 2017-06-05T09:19:06Z 2004 Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals / F.V. Motsnyi, V.G. Dorogan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.35.-y, 78.60.-b, 78.68.+m https://nasplib.isofts.kiev.ua/handle/123456789/119203 The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due to Mn²⁺ and Cr³⁺ ions, accordingly. The experimental results were explained using the configuration model. The energies between minima of configuration curves of excited and basic states for both centres were estimated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals |
| spellingShingle |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals Motsnyi, F.V. Dorogan, V.G. |
| title_short |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals |
| title_full |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals |
| title_fullStr |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals |
| title_full_unstemmed |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals |
| title_sort |
radiative recombination in bii₃(mn) and bii₃(cr) layered single crystals |
| author |
Motsnyi, F.V. Dorogan, V.G. |
| author_facet |
Motsnyi, F.V. Dorogan, V.G. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due to Mn²⁺ and Cr³⁺ ions, accordingly. The experimental results were explained using the configuration model. The energies between minima of configuration curves of excited and basic states for both centres were estimated.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119203 |
| citation_txt |
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals / F.V. Motsnyi, V.G. Dorogan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
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AT motsnyifv radiativerecombinationinbii3mnandbii3crlayeredsinglecrystals AT doroganvg radiativerecombinationinbii3mnandbii3crlayeredsinglecrystals |
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2025-12-07T17:36:48Z |
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2025-12-07T17:36:48Z |
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