Accurate numerical modelling the GaAs MESFET current-voltage characteristics
In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In thi...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2004 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119205 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ. |
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Merabtine, N. Khemissi, S. Zaabat, M. Belgat, M. Kenzai, C. 2017-06-05T09:20:44Z 2017-06-05T09:20:44Z 2004 Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/119205 In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up [1-3], the obtained theoretical results are discussed and compared to the experimental ones. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Accurate numerical modelling the GaAs MESFET current-voltage characteristics Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics |
| spellingShingle |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics Merabtine, N. Khemissi, S. Zaabat, M. Belgat, M. Kenzai, C. |
| title_short |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics |
| title_full |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics |
| title_fullStr |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics |
| title_full_unstemmed |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics |
| title_sort |
accurate numerical modelling the gaas mesfet current-voltage characteristics |
| author |
Merabtine, N. Khemissi, S. Zaabat, M. Belgat, M. Kenzai, C. |
| author_facet |
Merabtine, N. Khemissi, S. Zaabat, M. Belgat, M. Kenzai, C. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up [1-3], the obtained theoretical results are discussed and compared to the experimental ones.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119205 |
| citation_txt |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ. |
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| first_indexed |
2025-12-07T21:18:52Z |
| last_indexed |
2025-12-07T21:18:52Z |
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