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Accurate numerical modelling the GaAs MESFET current-voltage characteristics

In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In thi...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Merabtine, N., Khemissi, S., Zaabat, M., Belgat, M., Kenzai, C.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119205
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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