Paramagnetic defects related to photoluminescence in SiOx films
The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bo...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119207 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862736235499356160 |
|---|---|
| author | Rudko, G.Yu. Vorona, I.P. Indutnyy, I.Z. Ishchenko, S.S. Shepeliavyi, P.E. Yukhymchuk, V.O. |
| author_facet | Rudko, G.Yu. Vorona, I.P. Indutnyy, I.Z. Ishchenko, S.S. Shepeliavyi, P.E. Yukhymchuk, V.O. |
| citation_txt | Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bonds •Si = SiyO₃–y. The annealing at 750 ⁰C causes the formation of amorphous silicon inclusions in SiOx matrix, appearance of the photoluminescence peaked at ~ 1.8 eV and shift of the EPR line to the low field range. The latter implies the preferable annealing of the paramagnetic defects in the regions of the sample with higher concentration of oxygen. The optically detected magnetic resonance studies show that these defects are not responsible for the luminescence; they are the centers of nonradiative recombination, but the efficiency of photoluminescence quenching due to these defects is rather low.
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| first_indexed | 2025-12-07T19:53:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119207 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:53:03Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rudko, G.Yu. Vorona, I.P. Indutnyy, I.Z. Ishchenko, S.S. Shepeliavyi, P.E. Yukhymchuk, V.O. 2017-06-05T09:24:14Z 2017-06-05T09:24:14Z 2004 Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 76.70.Hb, 78.55.Hx, 78.66.Sq https://nasplib.isofts.kiev.ua/handle/123456789/119207 The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bonds •Si = SiyO₃–y. The annealing at 750 ⁰C causes the formation of amorphous silicon inclusions in SiOx matrix, appearance of the photoluminescence peaked at ~ 1.8 eV and shift of the EPR line to the low field range. The latter implies the preferable annealing of the paramagnetic defects in the regions of the sample with higher concentration of oxygen. The optically detected magnetic resonance studies show that these defects are not responsible for the luminescence; they are the centers of nonradiative recombination, but the efficiency of photoluminescence quenching due to these defects is rather low. The authors are grateful to Prof. W.M. Chen and Prof.
 I.A. Buyanova for the possibility to carry out the ODMR
 experiments.
 This study was funded by the Programs of the
 National Academy of Sciences of Ukraine “Optical and
 spectroscopic investigations of semiconductors and
 semiconductor structures” and “Magnetic resonance and
 optical study of defects in semiconductors and
 dielectrics”. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Paramagnetic defects related to photoluminescence in SiOx films Article published earlier |
| spellingShingle | Paramagnetic defects related to photoluminescence in SiOx films Rudko, G.Yu. Vorona, I.P. Indutnyy, I.Z. Ishchenko, S.S. Shepeliavyi, P.E. Yukhymchuk, V.O. |
| title | Paramagnetic defects related to photoluminescence in SiOx films |
| title_full | Paramagnetic defects related to photoluminescence in SiOx films |
| title_fullStr | Paramagnetic defects related to photoluminescence in SiOx films |
| title_full_unstemmed | Paramagnetic defects related to photoluminescence in SiOx films |
| title_short | Paramagnetic defects related to photoluminescence in SiOx films |
| title_sort | paramagnetic defects related to photoluminescence in siox films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119207 |
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