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Paramagnetic defects related to photoluminescence in SiOx films

The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered at g = 2.0040, which is explained by the presence of a variety of dangling bo...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2004
Hauptverfasser: Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119207
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Paramagnetic defects related to photoluminescence in SiOx films / G.Yu. Rudko, I.P. Vorona, I.Z. Indutnyy, S.S. Ishchenko, P.E. Shepeliavyi, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 400-403. — Бібліогр.: 9 назв. — англ.

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