On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals
Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119208 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862658874575683584 |
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| author | Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. |
| author_facet | Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. |
| citation_txt | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms per a formula unit of a crystal matrix) stems from the increasing dielectric permittivity of the crystal ε₀ due to availability of hydrogen in the van der Waals gap. Growth of ε₀(x) results in decrease of the exciton binding energy but, at larger x concentrations (when the anisotropy parameter ε*(х) grows), 2D localization of exciton motion in the crystal layer plane takes place, which causes reduction and then, at x > 1, stabilization of sizes both for the exciton and quantum well.
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| first_indexed | 2025-12-02T09:05:57Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119208 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T09:05:57Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. 2017-06-05T09:25:05Z 2017-06-05T09:25:05Z 2004 On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS: 71.35.Cc, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/119208 Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms per a formula unit of a crystal matrix) stems from the increasing dielectric permittivity of the crystal ε₀ due to availability of hydrogen in the van der Waals gap. Growth of ε₀(x) results in decrease of the exciton binding energy but, at larger x concentrations (when the anisotropy parameter ε*(х) grows), 2D localization of exciton motion in the crystal layer plane takes place, which causes reduction and then, at x > 1, stabilization of sizes both for the exciton and quantum well. This work was partially supported by the Basic Research Fund of Ukraine (Project No F7/310-2001). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals Article published earlier |
| spellingShingle | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. |
| title | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_full | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_fullStr | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_full_unstemmed | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_short | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_sort | on wannier exciton 2d localization in hydrogen intercalated inse and gase layered semiconductor crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119208 |
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